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The need for higher and higher data rates in a given cellular phone licensed bandwidth continues to grow. The reasons are so that the system can handle more voice channels and higher data rate video, Internet, and data transmission requirements. Techniques for increasing data rate capacity by using multilevel digital modulation techniques were discussed in 4. Multiple access techniques FDMA, TDMA, and CDMA will be discussed in this chapter. Data only techniques for CDMA (HSDPA and EV-DO) are also discussed. New multiple access techniques cannot be immediately implemented because of the high infrastructure costs; instead, they must be introduced in an evolutionary fashion. The GSM and cdma2000 evolutionary plans will therefore also be presented. OFDM multiple access and OFDMA techniques used for 802.11 high-speed, short-range data systems and Wi-MAX will be discussed in 31.

The rather large collector capacity (for a box-shaped transistor Cc is clearly smaller than CE because of the lower collector doping) is caused partly by an emitter stripe that is too small Indeed, the highest transit frequencies (fT - 100 GHz) were obtained with a 06-ptm stripe but for which no data were given Disadvantages of an advanced vertical scaling are low breakdown voltages (BVCEO = 25 V) and low Early voltages (VEa = 8 V) Applications that use bipolar circuits are, for example, core processing units (CPUs) of mainframe computers, high-frequency measurement equipment, satelliteand mobile-communication systems, optical fiber links, fast signal processors, and amplifiers and power-consuming peripherals The requirements for many of these applications are very different, but there are some common measures For logic applications the propagation delay per logic gate is connected to the speed of a communication system (Gb/s).

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A rough assessment may be found in Ref 43 In bipolar circuits, which are relatively immune to fanout, the propagation delay per.

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Report parameters can now be configured to allow the selection of multiple values. Figure 46-1 shows the result of creating a color parameter with the Multi-value option selected. The values selected by default can also be specified.

The nal link in the development of solution-deposited electronics and other devices, such as fuel cells and sensors, is that of metal deposition. Both solution and nanoparticle precursors have been used for the formation of metals with good electronic properties.18 20 This approach is potentially enabling for contacts for large-area devices, photovoltaics, touch screens, displays, and exible electronics. New generations of inks have demonstrated the potential to produce high-quality metal grid lines (see Fig. 14.5) with properties comparable with their vacuum-deposited equivalent. Combined with ink-jet printing, this enables better resolution than more conventionally used screen printing. It also enables rapid patterning and prototyping without photolithography. In addition, ink-jet printing provides the possibility to deposit multilayer metallic contacts and even wraparound or 3D-contacts, something that is nearly impossible using conventional methods. In the future, we expect that the variety of contact materials will expand to include a greater diversity of metals and that development of new interfacial modi ers will aid contact formation, dope at the interface, and stabilize the structure. It is also possible to anticipate organic surface agents that work with exible substrates and that processing methodologies will be improved to produce high-quality electronic materials, comparable with those prepared by conventional approaches, allowing for new functionality at signi cantly reduced cost and process temperatures. Currently, features on the order of 20 m are possible by ink jet printing (see Fig. 14.5). However, with the rapid development of next-generation ink-jet printing and other liquid precursor dispensing techniques, feature sizes smaller than a couple of micrometers will be possible in the not-too-distant future. We note also that stamping techniques, such as those initially developed by Whitesides, Stellacci, and others, can move printing into the nanometer regime.21,22

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