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Most of the early silicon products were fabricated using bulk micromachining where chemical etchants were used to attack different planes of a silicon crystal at different rates This approach is based on etching down into a surface, stopping on certain crystal faces, doped regions and etchable films to form the desired structure [16] This method is normally used in the production of microsensors and accelerometers The etching process, either the orientation-independent isotropic etching or the orientation-dependent anisotropic etching is well suited for substrate materials such as silicon, SiC, GaAs and quartz Wet isotropic etchants, plasma etchants and thermal oxidation methods are used to provide geometries that are independent of crystallographic orientations [9] However, isotropic etching or orientation-independent etching is less desirable because of the lack of control over the finished geometry of the workpiece [6] As most substrate materials are not isotropic in their crystalline structure, the etching process is usually orientation dependent The <110> orientation is often favoured because the wafer cleaves more cleanly Thermal oxidation is very common in the fabrication of microelectronics and microsystems There are four types of thin films that are frequently used in microelectronics and microsystems, namely, thermal oxidation for electrical or thermal insulation media, dielectric layers for electrical insulation, polycrystalline silicon for local electrical conduction and metal films for electrical (ohmic) contact and junctions [18] Silicon dioxide is used as an electric insulator as well as for etching masks for silicon and sacrificial layers in surface micromachining The silicon oxide layer is produced in an electric resistance furnace Etching is a process of the selective removal of materials by chemical means Wet etching which involves immersing the wafers in an acidic liquid solution is easy and inexpensive to perform However, it often produces poor quality surfaces due to the presence of bubbles and the flow patterns of the solution On the other hand, dry etching involves the removal of the substrate by gaseous etchants without wet chemicals Some dry etching techniques include plasma, ion milling and reactive ion etch Reactive plasma etching involves chlorine or fluorine ions that diffuse and chemically react with the substrate, forming a volatile compound that is removed by a vacuum system Figure 832 shows the illustration of reactive plasma etching and the product of deep reactive ion etching Deep reactive ion etching involves the use of a high-density plasma source which is capable of producing virtually vertical walls [6] Photolithography involves the use of an optical image and a photosensitive film to produce a pattern on a substrate It is used to set patterns for masks for cavity etching in bulk micromanufacturing or for thin-film deposition and etching of sacrificial layers in surface micromachining as well as for the primary circuitry of electrical signal transduction in sensors and actuators [6] The process of photolithography is clearly illustrated in Figure 833 The substrate is first coated with a layer of a photoresist It is then exposed to a set of lights through a transparent quartz mask.

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Known Quantities: Motor ratings; motor synchronous impedance Find: S; Eb ; Schematics, Diagrams, Circuits, and Given Data: Motor ratings: 460 V; 3 ; pf = 0707 lagging; full-load stator current: 125 A ZS = 1 + j 12 Assumptions: Use per-phase analysis

Reprinted by permission from Nature, 171:737 38. Copyright 1953 Macmillan Magazines Ltd. 1. Pauling, L., and Corey, R. B., Nature, 171, 346 (1953); Proc. U.S. Nat. Acad. Sci., 39, 84 (1953). 2. Furberg, S., Acta Chem. Scand., 6, 634 (1952). 3. Chargaff, E., for references see Zamenhof, S., Brawerman, G., and Chargaff, E., Biochim. et Biophys. Acta, 9, 402 (1952). 4. Wyatt, G. R., J. Gen. Physiol., 36, 201 (1952). 5. Astbury, W. T., Symp. Soc. Exp. Biol. 1, Nucleic Acid 66 (Camb. Univ. Press, 1947). 6. Wilkins, M. H. F., and Randall, J. T., Biochim. et Biophys. Acta, 10, 192 (1953).

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The per-phase voltage is 460 V VS = |VS | = = 26558 V 3 The kVA rating of the motor is expressed in terms of the apparent power, S (see 7): S = 3VS IS = 3 26558 V 125 A = 9,959 W From the equivalent circuit, we have Eb = VS IS (RS + j XS ) = 26558 (125 45 A) (1 + j 12 The induced line voltage is de ned to be Vline = 3Eb = 3 17931 V = 31057 V From the expression for Eb , we can nd the power angle: = 3283

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When the substrates are in their proper position in the active site of the enzyme, the particular reaction that the enzyme catalyzes takes place. The reaction products then separate from the enzyme and leave it free to repeat the process. Enzymes can work at phenomenal speeds. Some can catalyze as many as a million reactions per minute. Not all of the cell s proteins function as catalysts. Some are structural proteins, such as keratin, the main component of hair. Other proteins are regulatory they control the rate at which other enzymes work. Still others are involved in different functions; albumins, for example, help regulate the osmotic pressure of blood.

Known Quantities: Motor ratings; motor synchronous impedance Find: IS ; Iline ; Eb Schematics, Diagrams, Circuits, and Given Data: Motor ratings: 208 V; 3 ; 45 kVA;

Analysis: The output power of the motor is 15 hp; that is:

The McGraw Hill Companies, 2001

Microelectro-mechanical Systems (MEMS)

Pout = 15 hp 0746 kW/hp = 1119 kW The electric power supplied to the machine is Pin = Pout + Pmech + Pcore-loss + Pelec-loss = 1119 kW + 15 kW + 10 kW + 0 kW = 1369kW As discussed in 7, the resulting line current is Pin 13,690 W Iline = = = 475 A 3V cos 3 208 V 08 Because of the connection, the armature current is 1 IS = Iline = 274 3687 A 3

A-17

The emf may be found from the equivalent circuit and KVL: E b = V S j X S IS = 208 0 j 25 The power angle is = 124 (274 3687 A) = 255 124 V

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