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Although not required, in the Listing 22-10 example, you created the Select Command object prior to creating the DataAdapter. Then, when you created the DataAdapter, you passed the Select Command to the constructor. The DataAdapter constructor provides a number of overloads that allow you to optimize how you create a DataAdapter, and the one you use becomes a thing of personal preference as well as a factor of how much code you wish to write. Listing 22-10 also makes use of the DataAdapter Fill command that is one of the only three points of interaction between a DataSet and a DataAdapter. The Fill command serves the purpose of executing the Select command against the database and populating the appropriate DataTable in the DataSet with the results of the query. You see the results of the fill later when you examine the details of a DataSet. The FillSchema method is used primarily to configure a DataTable within a particular DataSet with the database-specific schema and constraint information before actually filling a DataTable using the DataAdapter. For example, certain database constraint information, such as primary key information, must be known by a DataTable before it can successfully update or delete information. Without a primary key, it cannot find the appropriate rows to perform these actions on. Because this type of information needs to be added to the schema of a particular DataTable, four methods exist for adding it: As noted in the previous chapter, you can specify it at design time in the XML schema document loaded into the DataSet. You can infer the schema from an existing XML document. You can fill it using the FillSchema method, which uses the SQL statement specified in the SelectCommand object to derive the

For an end-to-end example of creating a Compact Framework application with SQL Everywhere that uses merge replication to SQL Server, see http://msdn.microsoft.com/

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The Modify Sketch tool is still one of my favorite sketch editing tools to use because it is straightforward and doesn t do anything unexpected. It was also an original SolidWorks development, not a tool meant to duplicate existing AutoCAD functionality like some of the previously mentioned sketch tools. The one thing about Modify Sketch that many people find unsettling is that the red sketch origin moves and rotates along with the rest of the sketch. Once you make peace with the fact that you can t use the red sketch origin for much anyway, this becomes unimportant.

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SOI memory chips evolved quite rapidly during the late 1990s. Until 1992 only SRAMs chips had been demonstrated, but later, when the quality of SIMOX material reached a high-enough quality to ensure low leakage current levels in pass transistors, DRAM chips were fabricated as well. Table 5.6 presents the evolution of 0 SOI SRAMs and DRAMs over the years.12 -132 The advantages of SOI for memory chips are multiple. In the case of SRAMs, the use of SOI reduces the rate of SEU (single-event upset) and rules out SEL (singleevent latchup). Hence the use of SOI for memory chips used in space applications. In addition, the reduced parasitic capacitances and the reduced body effect allow for faster and lower-voltage operation. In the case of DRAMs, the advantages of SOI are a reduction of the bit line capacitance (by 25% compared to bulk), a reduction of the access transistor leakage current, and the reduction of the soft-error sensitivity. As a result, a storage capacitance of 12fF is sufficient for a 256-MB, 1.5-V DRAM realized in SOI, while 34fF are required for the equivalent bulk device. The advantage of using SO1, in terms of reducing the memory cell area, is obvious. It is also possible to realize DRAMs that can operate with a <I-V power supply, which has not yet been demonstrated in bulk. To achieve this level of performance, a reduced Cb/C 5 ratio must be achieved (Cb and C, are the bit line and the storage capacitances, respectively). The reduction of the bit-line capacitance comes "for free" with the use of SOI, while the increase of C, is achieved through the cell design. Considering the cell retention time, it has be shown that thin-film SO0 MOSFETs have a much lower leakage current than bulk or thicker SOI devices. OFF-

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